GaN transistor characteristics at elevated temperatures: Journal of Applied Physics: Vol 106, No 7
GaN Power HEMT > 650V VS SiC MOSFET- Power Electronics News
Model for Gate Capacitance of trench GaN Mosfet
Color online Cross section of the fabricated GaN MOSFET and MOS-HEMT. | Download Scientific Diagram
GaN FET vs. MOSFET: 150 V – 12 V DC-DC Conversion - YouTube
GaN FETs: The Technology of Choice for Audiophiles - Power Electronics News
GaN | Nexperia
Increasing gallium nitride MOSFET threshold voltage
東芝，GaN-MOSFETの信頼性を向上するプロセスを開発 | OPTRONICS ONLINE オプトロニクスオンライン
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
GaN power devices, Part 1: Principles
GaNの歩留まり90%や、耐圧1200Vの縦型構造など新GaNパワーFET - セミコンポータル
Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS
Rad-tolerant GaN FET handles 15 A, 900 V - Power Electronic Tips
量産対応で、最大10kWのアプリケーションを サポートする600V GaN FET製品ポートフォリオを発表 | news.tij.co.jp
High-speed GaN FET driver switches at 40 MHz - Power Electronic Tips
SiCおよびGaN半導体 | DigiKey
GaN-HEMTの特徴 | 半導体製品 | 新電元工業株式会社- Shindengen
EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN® FET Family | Business Wire
GaN FETの特性：GaNパワー半導体入門（2）（1/4 ページ） - EDN Japan
900V 170mΩ Gallium Nitride (GaN) FET - Transphorm | Mouser
PowerUP EXPO 2021: Fundamentals of GaN and SiC power devices
GaN Transistor for Several Power Applications - Power Electronics News
